Self-assembled InAs quantum dots with two different matrix materials

Journal of Crystal Growth

Volumn 290, Issue 2, 2006, Pages 384-387

  Kim, Jin Soo ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

A1. Strain; A3. Molecular beam epitaxy; A3. Quantum dot

Indexed keywords

ATOMIC FORCE MICROSCOPY; MOLECULAR BEAM EPITAXY; OPTICAL PROPERTIES; PHOTOLUMINESCENCE; SELF ASSEMBLY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SPECTROSCOPIC ANALYSIS; STRAIN; TRANSMISSION ELECTRON MICROSCOPY;

MATRIX MATERIALS; PHOTOLUMINESCENCE (PL) SPECTROSCOPY; ROOM TEMPERATURE; SIZE QUANTIZATION EFFECT;

SEMICONDUCTOR QUANTUM DOTS;

EID: 33747781818     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.02.007     Document Type: Article

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