Growth of high-quality GaAs on Ge/Si 1-xGe x on nanostructured silicon substrates

Applied Physics Letters

Volumn 88, Issue 25, 2006, Pages

  Vanamu, G ^c   Datye, A K ^c   Dawson, R ^a   Zaidi, Saleem H ^b  

^a UNIVERSITY OF NEW MEXICO   (United States)

^b Gratings Incorporated   (United States)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

INTERFEROMETRIC LITHOGRAPHY; NANOMETER-LINEWIDTH; SUBMICROMETER PERIOD FEATURES; SUBMICROSTRUCTURED SI SUBSTRATES;

EPITAXIAL GROWTH; INTERFEROMETRY; NANOSTRUCTURED MATERIALS; SILICON; SUBSTRATES; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33745445655     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2214145     Document Type: Article

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