High-performance 1.55-μm wavelength GaInAsP-InP distributed-feedback lasers with wirelike active regions

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 7, Issue 2, 2001, Pages 249-258

  Nunoya, Nobuhiro ^b   Nakamura, Madoka ^b   Morshed, Monir ^b   Tamura, Shigeo ^b   Arai, Shigehisa ^a,b  

^a IEEE

^b TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

CH4 H2 RIE; DFB laser; EB lithography; GaInAsP InP; OMVPE regrowth

Indexed keywords

ELECTRON BEAM LITHOGRAPHY; EPITAXIAL GROWTH; HETEROJUNCTIONS; REACTIVE ION ETCHING; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE;

GALLIUM INDIUM ARSENIDE PHOSPHIDE; ORGANOMETALLIC VAPOR PHASE EPITAXIAL GROWTH;

DISTRIBUTED FEEDBACK LASERS;

EID: 0035263851     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/2944.954137     Document Type: Article

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