Site-controlled photoluminescence at telecommunication wavelength from InAs/InP quantum dots

Applied Physics Letters

Volumn 86, Issue 11, 2005, Pages 1-3

  Song, H Z ^a   Usuki, T ^a   Hirose, S ^a   Takemoto, K ^a   Nakata, Y ^a   Yokoyama, N ^a   Sakuma, Y ^b  

^a FUJITSU LABORATORIES LTD   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; BAND STRUCTURE; ETCHING; METALLORGANIC CHEMICAL VAPOR DEPOSITION; OPTICAL FIBERS; OXIDATION; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM PHOSPHIDE;

SITE-CONTROLLED PHOTILUMINESCENCE; TELECOMMUNICATION BANDS; TELECOMMUNICATION WAVELENGTH; WET ETCHING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 17944375543     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1887826     Document Type: Article

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