73% CW power conversion efficiency at 50 W from 970 nm diode laser bars

Electronics Letters

Volumn 41, Issue 5, 2005, Pages 245-247

  Kanskar, M ^a   Earles, T ^a   Goodnough, T J ^a   Stiers, E ^a   Botez, D ^b   Mawst, L J ^b  

^a Alfalight Inc   (United States)

^b University of Wisconsin Madison   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COOLING; ELECTRIC POTENTIAL; OPTIMIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING; THERMAL CONDUCTIVITY; VELOCITY MEASUREMENT; WAVEGUIDES;

HEAT SINKING; LASER BARS; POWER CONVERSION EFFICIENCY (PCE); POWER DENSITY;

SEMICONDUCTOR LASERS;

EID: 15544388819     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20058260     Document Type: Article

References (6)

1. Botez, D., Mawst, L.J., Bhattacharya, A., Lopez, J., Li, J., Kuech, T.F., Iakovlev, V.P., Suruceanu, G.I., Caliman, A., and Syrbu, A.V.: '66% CW wallplug efficiency from Al-free 0.98 μm-emitting diode lasers', Electron. Lett., 1996, 32, (21), pp. 2012-2013
2. 2, P = 1.1 W, effic. = 66%, T = 10°C)', Sov. Tech. Phys. Lett., 1988, 14, (4), pp. 310-311
3. Kanskar, M., Nesnidal, M., Meassick, M., Goulakov, A., Dai, Z., Earles, T., Forbes, D., Stiers, E., Zhang, L., Botez, D., and Mawst, L.J.: 'Performance and reliability of ARROW single-mode and 100 μm-stripe laser diodes and the use of NAM in Al-free lasers', Proc. SPIE, Optoelectronics 2003, Novel In-Plane Semiconductor Lasers II, 2003, 4995, pp. 196-208
4. Fukunaga, T., Wada, M., and Hayakawa, T.: 'Reliable operation of strain-compensated 1.06 μm InGaAs/InGaAsP/InGaP single quantum-well lasers', Appl. Phys. Lett., 1996, 69, (2), pp. 248-250
5. Botez, D.: 'Design considerations and analytical approximations for high continuous-wave power, broad-waveguide diode lasers', Appl. Phys. Lett., 1999, 74, pp. 3102-3104
6. Bour, D.P., and Rosen, A.: 'Optimum cavity length for high conversion efficiency quantum well diode lasers', J. Appl. Phys., 1989, 66, (7), pp. 2813-2818