SCOPUS 정보 검색 플랫폼

Journal of Applied Physics

Volumn 106, Issue 7, 2009, Pages

Analysis of 1.2 μm InGaAs/GaAs quantum dot laser for high power applications

(4) Jiang, Q a Zhang, Z Y a Childs, D T D a Hogg, R A a

a UNIVERSITY OF SHEFFIELD (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

EXTREME CASE; GAIN-CLAMPING; HIGH POWER APPLICATIONS; INGAAS/GAAS; INTERNAL LOSS; P-DOPING; QUANTUM DOT LASERS; SATURATED GAIN; THRESHOLD CURRENTS;

DOPING (ADDITIVES); LASERS; PHOSPHORUS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70350103063 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3204660 Document Type: Article

Times cited : (9)

References (35)

1
- 0002449384
- 10.1063/1.127012
- O. B. Shchekin, G. Park, D. L. Huffaker, and D. G. Deppe, Appl. Phys. Lett. 77, 466 (2000). 10.1063/1.127012
- (2000) Appl. Phys. Lett. , vol.77 , pp. 466
- Shchekin, O.B.¹ Park, G.² Huffaker, D.L.³ Deppe, D.G.⁴

2
- 20544446361
- High-performance three-layer 1.3-μm InAs-GaAs quantum-dot lasers with very low continuous-wave room-temperature threshold currents
- DOI 10.1109/LPT.2005.846948
- H. Y. Liu, D. T. Childs, T. J. Badcock, K. M. Groom, I. R. Sellers, M. Hopkinson, R. A. Hogg, D. J. Robbins, D. J. Mowbray, and M. S. Skolnick, IEEE Photonics Technol. Lett. 17, 1139 (2005). 10.1109/LPT.2005.846948 (Pubitemid 40843443)
- (2005) IEEE Photonics Technology Letters , vol.17 , Issue.6 , pp. 1139-1141
- Liu, H.Y.¹ Childs, D.T.² Badcock, T.J.³ Groom, K.M.⁴ Sellers, I.R.⁵ Hopkinson, M.⁶ Hogg, R.A.⁷ Robbins, D.J.⁸ Mowbray, D.J.⁹ Skolnick, M.S.¹⁰

3
- 58049131675
- 10.1049/el:20092873
- D. G. Deppe, K. Shavritranuruk, G. Ozgur, H. Chen, and S. Freisem, Electron. Lett. 45, 1 (2009). 10.1049/el:20092873
- (2009) Electron. Lett. , vol.45 , pp. 1
- Deppe, D.G.¹ Shavritranuruk, K.² Ozgur, G.³ Chen, H.⁴ Freisem, S.⁵

4
- 21544475375
- 10.1063/1.92959
- Y. Arakawa and H. Sakaki, Appl. Phys. Lett. 40, 939 (1982). 10.1063/1.92959
- (1982) Appl. Phys. Lett. , vol.40 , pp. 939
- Arakawa, Y.¹ Sakaki, H.²

5
- 0001217274
- Thermal effects in quantum dot lasers
- DOI 10.1063/1.369417, PII S002189799903501X
- A. Patane, A. Polimeni, M. Henini, L. Eaves, P. C. Main, and G. Hill, J. Appl. Phys. 85, 625 (1999). 10.1063/1.369417 (Pubitemid 129710185)
- (1999) Journal of Applied Physics , vol.85 , Issue.1 , pp. 625-627
- Patane, A.¹ Polimeni, A.² Henini, M.³ Eaves, L.⁴ Main, P.C.⁵ Hill, G.⁶

6
- 84892274867
- 10.1109/JQE.1986.1073149
- M. Asada, Y. Miyamoto, and Y. Suematsu, IEEE J. Quantum Electron. 22, 1915 (1986). 10.1109/JQE.1986.1073149
- (1986) IEEE J. Quantum Electron. , vol.22 , pp. 1915
- Asada, M.¹ Miyamoto, Y.² Suematsu, Y.³

7
- 6344289296
- 10.1143/JJAP.43.L1124
- K. Otsubo, N. Hatori, M. Ishida, S. Okumura, T. Akiyama, Y. Nakata, H. Ebe, M. Sugawara, and Y. Arakawa, Jpn. J. Appl. Phys., Part 1 43, 1124 (2004). 10.1143/JJAP.43.L1124
- (2004) Jpn. J. Appl. Phys., Part 1 , vol.43 , pp. 1124
- Otsubo, K.¹ Hatori, N.² Ishida, M.³ Okumura, S.⁴ Akiyama, T.⁵ Nakata, Y.⁶ Ebe, H.⁷ Sugawara, M.⁸ Arakawa, Y.⁹

8
- 33947497728
- Z. Y. Zhang, Z. G. Wang, B. Xu, P. Jin, Z. Z. Sun, and F. Q. Liu, IEEE Photonics Technol. Lett. 16, 1 (2004).
- (2004) IEEE Photonics Technol. Lett. , vol.16 , pp. 1
- Zhang, Z.Y.¹ Wang, Z.G.² Xu, B.³ Jin, P.⁴ Sun, Z.Z.⁵ Liu, F.Q.⁶

9
- 56749181953
- 10.1109/JPROC.2007.900899
- T. Akiyama, M. Sugawara, and Y. Arakawa, Proc. IEEE 95, 9 (2007). 10.1109/JPROC.2007.900899
- (2007) Proc. IEEE , vol.95 , pp. 9
- Akiyama, T.¹ Sugawara, M.² Arakawa, Y.³

10
- 0028479992
- J. S. Wang, E. M. Vogel, and E. Snitzer, Opt. Mater. (Amsterdam, Neth.) 3, 187 (1994).
- (1994) Opt. Mater. (Amsterdam, Neth.) , vol.3 , pp. 187
- Wang, J.S.¹ Vogel, E.M.² Snitzer, E.³

11
- 39749100826
- 3+-doped silica fiber lasers pumped with diode lasers operating at 1150 nm
- DOI 10.1364/OL.32.002873
- S. D. Jackson, F. Bugge, and G. Erbert, Opt. Lett. 32, 2873 (2007). 10.1364/OL.32.002873 (Pubitemid 351302904)
- (2007) Optics Letters , vol.32 , Issue.19 , pp. 2873-2875
- Jackson, S.D.¹ Bugge, F.² Erbert, G.³

12
- 70350125346
- E. R. M. Taylor, L. N. Ng, J. Nilsson, R. Caponi, A. Pagano, M. Potenza, and B. Sordo, IEEE Photonics Technol. Lett. 16, 3 (2004).
- (2004) IEEE Photonics Technol. Lett. , vol.16 , pp. 3
- Taylor, E.R.M.¹ Ng, L.N.² Nilsson, J.³ Caponi, R.⁴ Pagano, A.⁵ Potenza, M.⁶ Sordo, B.⁷

13
- 34249706362
- 5 glass
- DOI 10.1364/OE.15.006750
- R. Balda, J. Fernández, S. García-Revilla, and J. M. Fernández Navarro, Opt. Express 15, 6750 (2007). 10.1364/OE.15.006750 (Pubitemid 46827674)
- (2007) Optics Express , vol.15 , Issue.11 , pp. 6750-6761
- Balda, R.¹ Fernandez, J.² Garcia-Revilla, S.³ Fernandez-Navarro, J.M.⁴

14
- 0036648318
- High-power highly strained InGaAs quantum-well lasers operating at 1.2 μm
- DOI 10.1109/LPT.2002.1012374, PII S1041113502046177
- T. K. Sharma, M. Zorn, F. Bugge, R. Hulsewede, G. Erbert, and M. Weyers, IEEE Photonics Technol. Lett. 14, 887 (2002). 10.1109/LPT.2002.1012374 (Pubitemid 34878914)
- (2002) IEEE Photonics Technology Letters , vol.14 , Issue.7 , pp. 887-889
- Sharma, T.K.¹ Zorn, M.² Bugge, F.³ Hulsewede, R.⁴ Erbert, G.⁵ Weyers, M.⁶

15
- 0031675890
- 10.1143/JJAP.37.90
- T. Miyamoto, K. Takeuchi, T. Kageyama, F. Koyama, and K. Iga, Jpn. J. Appl. Phys., Part 1 37, 90 (1998). 10.1143/JJAP.37.90
- (1998) Jpn. J. Appl. Phys., Part 1 , vol.37 , pp. 90
- Miyamoto, T.¹ Takeuchi, K.² Kageyama, T.³ Koyama, F.⁴ Iga, K.⁵

16
- 36248959834
- 1240nm high-power GaInNAs laser diodes
- DOI 10.1364/OE.15.015187
- D. Bisping, S. Schneider, S. Höfling, S. Habermann, M. Fischer, J. Koeth, and A. Forchel, Opt. Express 15, 23 (2007). 10.1364/OE.15.015187 (Pubitemid 350127667)
- (2007) Optics Express , vol.15 , Issue.23 , pp. 15187-15192
- Bisping, D.¹ Schneider, S.² Hofling, S.³ Habermann, S.⁴ Fischer, M.⁵ Koeth, J.⁶ Forchel, A.⁷

17
- 36549102536
- 10.1063/1.99584
- K. J. Vahala and C. E. Zah, Appl. Phys. Lett. 52, 1945 (1988). 10.1063/1.99584
- (1988) Appl. Phys. Lett. , vol.52 , pp. 1945
- Vahala, K.J.¹ Zah, C.E.²

18
- 51749087028
- 10.1063/1.2975961
- Y. D. Jang, T. J. Badcock, D. J. Mowbray, M. S. Skolnick, J. Park, D. Lee, H. Y. Liu, M. Hopkinson, R. A. Hogg, and A. D. Andreev, Appl. Phys. Lett. 93, 101903 (2008). 10.1063/1.2975961
- (2008) Appl. Phys. Lett. , vol.93 , pp. 101903
- Jang, Y.D.¹ Badcock, T.J.² Mowbray, D.J.³ Skolnick, M.S.⁴ Park, J.⁵ Lee, D.⁶ Liu, H.Y.⁷ Hopkinson, M.⁸ Hogg, R.A.⁹ Andreev, A.D.¹⁰

19
- 79957929085
- o=161 K from 0 to 80°c
- DOI 10.1063/1.1476708
- O. B. Shchekin and D. G. Deppe, Appl. Phys. Lett. 80, 3277 (2002). 10.1063/1.1476708 (Pubitemid 34599964)
- (2002) Applied Physics Letters , vol.80 , Issue.18 , pp. 3277-3279
- Shchekin, O.B.¹ Deppe, D.G.²

20
- 34547838316
- 10.1103/PhysRevB.76.085315
- C. Y. Jin, H. Y. Liu, K. M. Groom, Q. Jiang, M. Hopkinson, T. J. Badcock, R. J. Royce, and D. J. Mowbray, Phys. Rev. B 76, 085315 (2007). 10.1103/PhysRevB.76.085315
- (2007) Phys. Rev. B , vol.76 , pp. 085315
- Jin, C.Y.¹ Liu, H.Y.² Groom, K.M.³ Jiang, Q.⁴ Hopkinson, M.⁵ Badcock, T.J.⁶ Royce, R.J.⁷ Mowbray, D.J.⁸

21
- 0003986655
- 2nd ed. (Van Nostrand Rhinhold, New York).
- G. P. Agrawal and N. K. Dutta, Semiconductor Lasers, 2nd ed. (Van Nostrand Rhinhold, New York, 1993).
- (1993) Semiconductor Lasers
- Agrawal, G.P.¹ Dutta, N.K.²

22
- 0032712543
- 10.1088/0268-1242/14/1/020
- A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, A. Yu. Egorov, N. N. Ledentsov, A. F. Tsatsul'nikov, M. V. Maximov, Yu. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop'ev, D. Bimberg, and Zh. I. Alferov, Semicond. Sci. Technol. 14, 118 (1999). 10.1088/0268-1242/14/1/020
- (1999) Semicond. Sci. Technol. , vol.14 , pp. 118
- Zhukov, A.E.¹ Kovsh, A.R.² Ustinov, V.M.³ Egorov, A.Yu.⁴ Ledentsov, N.N.⁵ Tsatsul'Nikov, A.F.⁶ Maximov, M.V.⁷ Shernyakov, Yu.M.⁸ Kopchatov, V.I.⁹ Lunev, A.V.¹⁰ Kop'Ev, P.S.¹¹ Bimberg, D.¹² Alferov, Zh.I.¹³

23
- 33947317527
- 10.1109/JQE.2006.883473
- C. Y. Jin, T. J. Badcock, H. Y. Liu, K. M. Groom, R. J. Royce, D. J. Mowbray, and M. Hopkinson, IEEE J. Quantum Electron. 42, 1259 (2006). 10.1109/JQE.2006.883473
- (2006) IEEE J. Quantum Electron. , vol.42 , pp. 1259
- Jin, C.Y.¹ Badcock, T.J.² Liu, H.Y.³ Groom, K.M.⁴ Royce, R.J.⁵ Mowbray, D.J.⁶ Hopkinson, M.⁷

24
- 33846282378
- Gain in p -doped quantum dot lasers
- DOI 10.1063/1.2405738
- P. M. Smowton, I. C. Scandall, H. Y. Liu, and M. Hopkinson, J. Appl. Phys. 101, 013107 (2007). 10.1063/1.2405738 (Pubitemid 46120597)
- (2007) Journal of Applied Physics , vol.101 , Issue.1 , pp. 013107
- Smowton, P.M.¹ Sandall, I.C.² Liu, H.Y.³ Hopkinson, M.⁴

25
- 36348943489
- Systematic study of the effects of modulation p-doping on 1.3-μ quantum-dot lasers
- DOI 10.1109/JQE.2007.907213
- R. R. Alexander, D. T. D. Childs, H. Agarwal, K. M. Groom, H.-Y. Liu, M. Hopkinson, R. A. Hogg, M. Ishida, T. Yamamoto, M. Sugawara, Y. Arakawa, T. J. Badcock, R. J. Royce, and D. J. Mowbray, IEEE J. Quantum Electron. 43, 1129 (2007). 10.1109/JQE.2007.907213 (Pubitemid 350142393)
- (2007) IEEE Journal of Quantum Electronics , vol.43 , Issue.12 , pp. 1129-1139
- Alexander, R.R.¹ Childs, D.T.D.² Agarwal, H.³ Groom, K.M.⁴ Liu, H.-Y.⁵ Hopkinson, M.⁶ Hogg, R.A.⁷ Ishida, M.⁸ Yamamoto, T.⁹ Sugawara, M.¹⁰ Arakawa, Y.¹¹ Badcock, T.J.¹² Royce, R.J.¹³ Mowbray, D.J.¹⁴

26
- 10244230860
- 10.1109/JQE.2004.837331
- S. Osborne, P. Blood, P. Smowton, J. Lutti, Y. C. Xin, A. Stintz, D. Huffaker, and L. F. Lester, IEEE J. Quantum Electron. 40, 1639 (2004). 10.1109/JQE.2004.837331
- (2004) IEEE J. Quantum Electron. , vol.40 , pp. 1639
- Osborne, S.¹ Blood, P.² Smowton, P.³ Lutti, J.⁴ Xin, Y.C.⁵ Stintz, A.⁶ Huffaker, D.⁷ Lester, L.F.⁸

27
- 0037019212
- High temperature performance of self-organised quantum dot laser with stacked p-doped active region
- DOI 10.1049/el:20020509
- O. B. Shchekin, J. Ahn, and D. G. Deppe, Electron. Lett. 38, 712 (2002). 10.1049/el:20020509 (Pubitemid 34806612)
- (2002) Electronics Letters , vol.38 , Issue.14 , pp. 712-713
- Shchekin, O.B.¹ Ahn, J.² Deppe, D.G.³

28
- 11044225644
- 0 = ∞) of p-doped 1.3 μm quantum dot lasers
- DOI 10.1063/1.1829158, 3
- S. Fathpour, Z. Mi, P. Bhattacharya, A. R. Kovsh, S. S. Mikhrin, I. L. Krestnikov, A. V. Kozhukhov, and N. N. Ledentsov, Appl. Phys. Lett. 85, 5164 (2004). 10.1063/1.1829158 (Pubitemid 40043517)
- (2004) Applied Physics Letters , vol.85 , Issue.22 , pp. 5164-5166
- Fathpour, S.¹ Mi, Z.² Bhattacharya, P.³ Kovsh, A.R.⁴ Mikhrin, S.S.⁵ Krestnikov, I.L.⁶ Kozhukhov, A.V.⁷ Ledentsov, N.N.⁸

29
- 27844532235
- 10.1063/1.2135204
- I. P. Marko, N. F. Masse, S. J. Sweeney, A. D. Andreev, A. R. Adams, N. Hatori, and M. Sugawara, Appl. Phys. Lett. 87, 211114 (2005). 10.1063/1.2135204
- (2005) Appl. Phys. Lett. , vol.87 , pp. 211114
- Marko, I.P.¹ Masse, N.F.² Sweeney, S.J.³ Andreev, A.D.⁴ Adams, A.R.⁵ Hatori, N.⁶ Sugawara, M.⁷

30
- 33747516392
- P-doped 1.3 yum InAs/GaAs quantum-dot laser with a low threshold current density and high differential efficiency
- DOI 10.1063/1.2336998
- H. Y. Liu, S. L. Liew, T. Badcock, D. J. Mowbray, M. S. Skolnick, S. K. Ray, T. L. Choi, K. M. Groom, B. Stevens, F. Hasbullah, C. Y. Jin, M. Hopkinson, and R. A. Hogg, Appl. Phys. Lett. 89, 073113 (2006). 10.1063/1.2336998 (Pubitemid 44259969)
- (2006) Applied Physics Letters , vol.89 , Issue.7 , pp. 073113
- Liu, H.Y.¹ Liew, S.L.² Badcock, T.³ Mowbray, D.J.⁴ Skolnick, M.S.⁵ Ray, S.K.⁶ Choi, T.L.⁷ Groom, K.M.⁸ Stevens, B.⁹ Hasbullah, F.¹⁰ Jin, C.Y.¹¹ Hopkinson, M.¹² Hogg, R.A.¹³

31
- 33746884697
- 1.3m InAs/GaAs quantum-dot laser with low-threshold current density and negative characteristic temperature above room temperature
- DOI 10.1049/el:20061487
- T. J. Badcock, H. Y. Liu, K. M. Groom, C. Y. Jin, M. Gutírrez, M. Hopkinson, D. J. Mowbray, and M. S. Skolnick, Electron. Lett. 42, 922 (2006). 10.1049/el:20061487 (Pubitemid 44186797)
- (2006) Electronics Letters , vol.42 , Issue.16 , pp. 922-923
- Badcock, T.J.¹ Liu, H.Y.² Groom, K.M.³ Jin, C.Y.⁴ Gutierrez, M.⁵ Hopkinson, M.⁶ Mowbray, D.J.⁷ Skolnick, M.S.⁸

32
- 0041513233
- 10.1088/0268-1242/18/8/310
- A. E. Zhukov, A. R. Kovsh, D. A. Livshits, V. M. Ustinov, and Zh. I. Alferov, Semicond. Sci. Technol. 18, 774 (2003). 10.1088/0268-1242/18/8/310
- (2003) Semicond. Sci. Technol. , vol.18 , pp. 774
- Zhukov, A.E.¹ Kovsh, A.R.² Livshits, D.A.³ Ustinov, V.M.⁴ Alferov, Zh.I.⁵

33
- 53449083534
- 10.1021/nl073115a
- P. Moreno, M. Richard, M. Rossetti, M. Portella-Oberli, L. H. Li, B. Deveaud-Pĺdran, and A. Fiore, Nano Lett. 8, 881 (2008). 10.1021/nl073115a
- (2008) Nano Lett. , vol.8 , pp. 881
- Moreno, P.¹ Richard, M.² Rossetti, M.³ Portella-Oberli, M.⁴ Li, L.H.⁵ Deveaud-Pĺdran, B.⁶ Fiore, A.⁷

34
- 33845792564
- Two-state switching and dynamics in quantum dot two-section lasers
- DOI 10.1063/1.2397293
- A. Markus, M. Rossetti, V. Calligari, D. Chek-Al-Kar, J. X. Chen, A. Fiore, and R. Scollo, J. Appl. Phys. 100, 013104 (2006). 10.1063/1.2397293 (Pubitemid 46012102)
- (2006) Journal of Applied Physics , vol.100 , Issue.11 , pp. 113104
- Markus, A.¹ Rossetti, M.² Calligari, V.³ Chek-Al-Kar, D.⁴ Chen, J.X.⁵ Fiore, A.⁶ Scollo, R.⁷

35
- 0022252691
- 10.1109/JQE.1985.1072606
- P. W. A. M. C. Ilroy, A. Kurobe, and Y. Uemetsu, IEEE J. Quantum Electron. 21, 1956 (1985). 10.1109/JQE.1985.1072606
- (1985) IEEE J. Quantum Electron. , vol.21 , pp. 1956
- Ilroy, P.W.A.M.C.¹ Kurobe, A.² Uemetsu, Y.³

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.