Quantum wires and quantum dots defined by lithography with an atomic force microscope

Microelectronics Journal

Volumn 33, Issue 4, 2002, Pages 319-321

  Luscher S ^a   Fuhrer, A ^a   Held, R ^a   Heinzel, T ^a   Ensslin, K ^a   Bichler, M ^b,c   Wegscheider, W ^b,c  

^a ETH ZURICH   (Switzerland)

^b WALTER SCHOTTKY INSTITUT   (Germany)

^c UNIVERSITY OF REGENSBURG   (Germany)

Author keywords

Atomic force microscope; Lithography; Nanostructures

Indexed keywords

ATOMIC FORCE MICROSCOPY; COULOMB BLOCKADE; ELECTRIC CONDUCTANCE; ELECTRONIC PROPERTIES; HETEROJUNCTIONS; NANOSTRUCTURED MATERIALS; PHOTOLITHOGRAPHY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WIRES;

SINGLE ELECTRON TRANSISTORS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0036531850     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(01)00125-2     Document Type: Conference Paper

References (47)

1. Electron transport in quantum dots