Low-threshold high-T0 1.3-μm InAs quantum-dot lasers due to p-type modulation doping of the active region

IEEE Photonics Technology Letters

Volumn 14, Issue 9, 2002, Pages 1231-1233

  Shchekin, O B ^a   Deppe, D G ^a  

^a The University of Texas at Austin   (United States)

Author keywords

1.3 m; Laser measurements; Laser resonators; Quantum dots; Semiconductor lasers

Indexed keywords

HIGH TEMPERATURE EFFECTS; LASER PULSES; LASER RESONATORS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR QUANTUM DOTS;

MODULATION DOPING;

SEMICONDUCTOR LASERS;

EID: 0036743142     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.801597     Document Type: Article

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