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Physica E: Low-Dimensional Systems and Nanostructures

Volumn 26, Issue 1-4, 2005, Pages 81-85

Controlling emission wavelength from InAs self-assembled quantum dots on InP (0 0 1) during MOCVD

(5) Sakuma, Y a Takemoto, K b Hirose, S b Usuki, T b Yokoyama, N b

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

b FUJITSU LABORATORIES LTD (Japan)

Author keywords

InAs; InP; MOCVD; Quantum dots

Indexed keywords

GROWTH KINETICS; INTERFACES (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; MONOLAYERS; PHOTOLUMINESCENCE; SEMICONDUCTING INDIUM COMPOUNDS; TRANSMISSION ELECTRON MICROSCOPY;

EMISSION WAVELENGTHS; INAS; INP; LATTICE MISMATCH;

SEMICONDUCTOR QUANTUM DOTS;

EID: 13444251285 PISSN: 13869477 EISSN: None Source Type: Journal
DOI: 10.1016/j.physe.2004.08.028 Document Type: Conference Paper

Times cited : (22)

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