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Applied Physics Letters

Volumn 95, Issue 11, 2009, Pages

Controlled growth of InGaAs/InGaAsP quantum dots on InP substrates employing diblock copolymer lithography

(6) Park, J H a Kirch, J a Mawst, L J a Liu, C C a Nealey, P F a Kuech, T F a

a University of Wisconsin Madison (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CONTROLLED GROWTH; DIBLOCK COPOLYMER; EMISSION WAVELENGTH; INGAAS/INGAASP; INGAASP; INP; INP SUBSTRATES; LAYER THICKNESS; METALORGANIC CHEMICAL VAPOR DEPOSITION; NANO SCALE; NANO-SIZED; NANOPATTERNING; PHOTOLUMINESCENCE INTENSITIES; QUANTUM DOT; QUANTUM DOTS; ROOM TEMPERATURE;

BLOCK COPOLYMERS; COPOLYMERIZATION; REACTIVE ION ETCHING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70349495652 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3224916 Document Type: Article

Times cited : (16)

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