Influence of quantum-well composition on the performance of quantum dot lasers using InAs/InGaAs dots-in-a-well (DWELL) structures

IEEE Journal of Quantum Electronics

Volumn 36, Issue 11, 2000, Pages 1272-1279

  Liu, G T ^a   Stintz, A ^a   Li, H ^a   Newell, T C ^a   Gray, A L ^a   Varangis, P M ^a   Malloy, K J ^a   Lester, L F ^a  

^a UNIVERSITY OF NEW MEXICO   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT DENSITY; GROUND STATE; MATHEMATICAL MODELS; MOLECULAR BEAM EPITAXY; QUANTUM EFFICIENCY; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM DOTS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE;

DOTS IN A WELL STRUCTURES; QUANTUM DOT DENSITY; QUANTUM DOT LASERS;

SEMICONDUCTOR LASERS;

EID: 0034314311     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.890268     Document Type: Article

References (25)

1. .85As quantum well," Electron. Lett., vol. 35, pp. 1163-1165, 1999.
2. L. F. Lester, A. Stintz, H. Li, T. C. Newell, E. A. Pease, B. A. Fuchs, and K. J. Malloy, "Optical characteristics of 1.24 μm quantum dot lasers," IEEE Photon. Technol. Lett., vol. 11, pp. 931-933, 1999.
3. Y. M. Shernyakov, D. A. Bedarev, E. Y. Kondrateva, P. S. Kopev, A. R. Kovsh, N. A. Maleev, M. V. Maximov, S. S. Mikhrin, A. F. Tsatsulnikov, V. M. Ustinov, B. V. Volovik, A. E. Zhukov, Z. I. Alferov, N. N. Ledentsov, and D. Bimberg, "1.3 μm GaAs-based laser using quantum dots obtained by activated spinodal decomposition," Electron. Lett., vol. 35, pp. 898-900, 1999.
4. A. E. Zhukov, A. R. Kovsh, V. M. Ustinov, Y. M. Shernyakov, S. S. Mikhrin, N. A. Maleev, E. Y. Kondrat'eva, D. A. Livshits, M. V. Maximov, B. V. Volovik, D. A. Bedarev, Yu. G. Musikhin, N. N. Ledentsov, P. S. Kopev, Z. I. Alferov, and D. Bimberg, "Continuous-wave operation of long-wavelength quantum-dot diode laser on a GaAs substrate," IEEE Photon. Technol. Lett., vol. 11, pp. 1345-1347, 1999.
5. K. Mukai, Y. Nakata, K. Otsubo, M. Sugawara, N. Yokoyama, and H. Ishikawa, "1.3-μm CW lasing of InGaAs-GaAs quantum dots at room temperature with a threshold current of 8 mA," IEEE Photon. Technol. Lett., vol. 11, pp. 1205-1207, 1999.
6. 0.8As grown on GaAs," Appl. Phys. Lett., vol. 74, pp. 1111-1113, 1999.
7. G. Park, O. B. Shchekin, D. L. Huffaker, and D. G. Deppe, "Low-threshold oxide-confined 1.3 μm quantum-dot laser," IEEE Photon. Technol. Lett., vol. 13, pp. 230-232, 2000.
8. D. L. Huffaker, G. Park, Z. Zou, O. B. Shchekin, and D. G. Deppe, "1.3 μm room-temperature GaAs-based quantum-dot laser," Appl. Phys. Lett., vol. 73, pp. 2564-2566, 1998.
9. 1 - xAs quantum wells," J. Vac. Sci. Technol., vol. 18, pp. 1496-1501, 2000.
10. K. Mukai and M. Sugawara, "Suppression of temperature sensitivity of interband emission energy in 1.3-mu m-region by an InGaAs overgrowth on self-assembled InGaAs GaAs quantum dots," Appl. Phys. Lett., vol. 74, pp. 3963-3965, 1999.
11. N. T. Yeh, T. E. Nee, J. I. Chyi, T. M. Hsu, and C. C. Huang, "Matrix dependence of strain-induced wavelength shift in self-assembled InAs quantum-dot heterostructures," Appl. Phys. Lett., vol. 76, pp. 1567-1569, 2000.
12. A. E. Zhukov, A. R. Kovsh, A. Y. Egorov, N. A. Maleev, V. M. Ustinov, B. V. Volovik, M. V. Maksimov, A. F. Tsatsulnikov, and N. N. Ledentsov, "Photo- and electroluminescence in the 1.3-μm wavelength range from quantum-dot structures grown on GaAs substrates," Semiconductors, vol. 33, pp. 153-156, 1999.
13. A. E. Zhukov, A. R. Kovsh, V. M. Üstinov, A. Yu. Egorov, N. N. Ledentsov, A. F. Tsatsul'nikov, M. V. Maximov, Yu. M. Shernyakov, V. I. Kopchatov, A. V. Lunev, P. S. Kop'ev, D. Bimberg, and Zh. I. Alferov, "Gain characteristics of quantum dot injection lasers," Semiconduct. Sci. Technol., vol. 14, pp. 118-123, 1999.
14. J. J. Coleman, Quantum Well Lasers, P. S. Zory Jr., Ed. New York: Academic, 1993, ch. 8.
15. G. W. Turner, H. K. Choi, and M. J. Manfra, "Ultralow-threshold (50 A/cm2) strained single-quantum-well GalnAsSb/AlGaAsSb lasers emitting at 2.05 μm," Appl. Phys. Lett., vol. 72, pp. 876-878, 1998.
16. T. C. Newell, D. J. Bossert, A. Stintz, B. Fuchs, K. J. Malloy, and L. F. Lester, "Gain and linewidth enhancement factor in InAs quantum-dot laser diodes," IEEE Photon. Technol. Lett., vol. 11, pp. 1527-1529, 1999.
17. J. R. Marciante and G. P. Agrawal, "Spatio-temporal characteristics of filamentation in broad-area semiconductor lasers," IEEE J. Quantum Electron., vol. 33, pp. 1174-1179, 1997.
18. K. J. Vahala, "Quantum box fabrication tolerance and size limits in semiconductors and their effect on optical gain," IEEE J. Quantum Electron., vol. 24, pp. 523-530, 1988.
19. M. Asada, Y. Mityamoto, and Y. Suematusu, "Gain and the threshold of 3-dimensional quantum-box lasers," IEEE J. Quantum Electron., vol. QE-22, pp. 1915-1921, 1986.
20. N. Kirstaedter, O. G. Schmidt, N. N. Ledentsov, D. Bimberg, V. M. Ustinov, A. Y. Egorov, A. E. Zhukov, M. V. Maximov, P. S. Kopev, and Z. I. Alferov, "Gain and differential gain of single layer InAs/GaAs quantum dot injection lasers," Appl. Phys. Lett., vol. 69, pp. 1226-1228, 1996.
21. M. Grundmann and D. Bimberg, "Gain and threshold of quantum dot lasers: Theory and comparison to experiments," Jpn. J. Appl. Phys., vol. 36, pp. 4181-4187, 1997.
22. _, "Theory of quantum dot laser gain and threshold: Electron and hole capture," Phys. Status Solidi A, vol. 164, pp. 297-300, 1997.
23. H. Jiang and J. Singh, "Nonequilibrium distribution in quantum dot lasers and influence on laser spectral output," J. Appl. Phys., vol. 85, pp. 7438-7442, 1999.
24. P. Eliseev, H. Li, A. Stintz, G. T. Liu, T. C. Newell, K. J. Malloy, and L. F. Lester, "Tunable grating-coupled laser oscillation and spectral hole burning in an InAs quantum-dot laser diode," IEEE J. Quantum Electron., vol. 36, pp. 479-485, 2000.
25. H. Li, G. T. Liu, P. M. Varangis, T. C. Newell, A. Stintz, B. A. Fuchs, K. J. Malloy, and L. F. Lester, "150 nm tuning range in a grating-coupled external cavity quantum dot laser," IEEE Photon. Technol. Lett., vol. 12, pp. 759-761, 2000.