High-power 1.3μm InAs/GaInAs/GaAs QD lasers grown in a multiwafer MBE production system

Journal of Crystal Growth

Volumn 278, Issue 1-4, 2005, Pages 335-341

  Wilk, A ^a   Kovsh, A R ^b   Mikhrin, S S ^b   Chaix, C ^a   Novikov, I I ^c   Maximov, M V ^c   Shernyakov, Yu M ^c   Ustinov, V M ^c   Ledentsov, N N ^b  

^a RIBER Process Technology Center   (France)

^b NL Nanosemiconductor GmbH   (Germany)

^c IOFFE INSTITUTE   (Russian Federation)

Author keywords

A1. Low dimensional structures; A3. Molecular beam epitaxy; B2. Semiconducting III V materials; B3. Laser diodes

Indexed keywords

CURRENT DENSITY; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; MOLECULAR BEAM EPITAXY; OPTICAL COMMUNICATION; OPTICAL FIBERS; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM DOTS;

LOW-DIMENSIONAL STRUCTURES; OPTICAL FIBER COMMUNICATION SYSTEMS; SEMICONDUCTING III-V MATERIALS; THRESHOLD CURRENT DENSITY;

SEMICONDUCTOR LASERS;

EID: 18444366791     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2005.01.040     Document Type: Conference Paper

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