Selective growth experiments on gallium arsenide (1 0 0) surfaces patterned using UV-nanoimprint lithography

Microelectronics Journal

Volumn 37, Issue 12, 2006, Pages 1477-1480

  Tukiainen, A ^a   Viheriala J ^a   Niemi, T ^a   Rytkonen T ^a   Kontio, J ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

Molecular beam epitaxy; Nanoimprint lithography; Patterned substrates; Selective growth

Indexed keywords

ATOMIC FORCE MICROSCOPY; LITHOGRAPHY; MOLECULAR BEAM EPITAXY; NANOTECHNOLOGY; SCANNING ELECTRON MICROSCOPY; SUBSTRATES; SURFACE STRUCTURE; X RAY DIFFRACTION;

NANOIMPRINT LITHOGRAPHY (NIL); PATTERNED SUBSTRATES; SELECTIVE GROWTH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 33750735711     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2006.05.030     Document Type: Article

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