Dewetting of copper nanolayers on silica in oxygen: Towards preparation of copper meso/nanowires by self-organization

Nanotechnology

Volumn 20, Issue 46, 2009, Pages

  Liao, Hua Yang ^a   Lo, Kang Jung ^a   Chang, Che Chen ^a  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

DE-WETTING; FORM LINES; LINE DEFECTS; LINE DENSITY; NANO LAYERS; OXYGEN PRESSURE; OXYGEN PRESSURE RANGE; SELF-ORGANIZATIONS; THERMAL BEHAVIORS; WAFER SURFACE;

COPPER; OXIDE FILMS; OXYGEN; SEMICONDUCTING SILICON COMPOUNDS; SILICA; SILICON OXIDES; SILICON WAFERS; STACKING FAULTS; SURFACE DEFECTS;

COPPER OXIDES;

COPPER; MOLECULAR LAYER; NANOWIRE; OXYGEN; SILICON; SILICON DIOXIDE; SILICON OXIDE; UNCLASSIFIED DRUG;

ARTICLE; DENSITY; DEWETTING BEHAVIOR; DIELECTRIC CONSTANT; DIFFUSION; FILM; NANOTECHNOLOGY; OXYGEN TENSION; PRIORITY JOURNAL; SURFACE PROPERTY; THERMAL CONDUCTIVITY;

EID: 70350645151     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/46/465607     Document Type: Article

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