Fabrication of Cu nanowires along atomic step edge lines on Si(1 1 1) substrates

Applied Surface Science

Volumn 237, Issue 1-4, 2004, Pages 529-532

  Tokuda, Norio ^a   Watanabe, Hidenobu ^a   Hojo, Daisuke ^a   Yamasaki, Satoshi ^b   Miki, Kazushi ^b,c   Yamabe, Kikuo ^a,d  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d Tsukuba Research Center for Interdisciplinary Materials Science   (Japan)

Author keywords

AFM; Cu; Electroless deposition; Nanowire; Si; Surface

Indexed keywords

ADSORPTION; APPROXIMATION THEORY; ELECTROCHEMISTRY; ELECTROLESS PLATING; ETCHING; NANOSTRUCTURED MATERIALS; NEGATIVE IONS; PHOTOLITHOGRAPHY; SILICON WAFERS; SUBSTRATES;

ANION RADICALS; METALLIC WIRES; PHOTOLITHOGRAPHIC TECHNIQUES; ULTRALOW-DISSOLVED-OXYGEN WATER (LOW);

COPPER;

EID: 4644338432     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2004.06.029     Document Type: Conference Paper

References (13)

1. Kizuka T., Umehara S., Fujisawa S. Jpn. J. Appl. Phys. 40:2001;L71.
2. Li J., Kanzaki T., Murakoshi K., Nakato Y. Appl. Phys. Lett. 81:2002;123.
3. Hara K., Ohdomari I. Jpn. J. Appl. Phys. 37:1998;L1333.
4. Homma T., Wade C.P., Chidsey C.E.D. J. Phys. Chem. B. 102:1998;7920.
5. Tokuda N., Hojo D., Yamasaki S., Miki K., Yamabe K. Jpn. J. Appl. 42:2003;L1210.
6. Fukidome H., Matsumura M. Jpn. J. Appl. Phys. 38:1999;L1085.
7. Hojo D., Tokuda N., Yamabe K. Jpn. J. Appl. 42:2003;7L561.
8. Pietsch G.J., Köhler U., Henzler M. J. Appl. Phys. 73:1993;4797.
9. Morinaga H., Suyama M., Nose M., Verhaverbeke S., Ohmi T. IEICE Trans. Electron. E79-C:1996;343.
10. Tatsumura K., Watanabe T., Hara K., Hoshino T., Ohdomari I. Phys. Rev. B. 64:2001;115406.
11. Allongue P., Kieling V., Gerischer H. Electrochem. Acta. 40:1995;1353.
12. Palik E.D., Glembocki O.J., Heard I. Jr. J. Electrochem. Soc. 134:1987;404.
13. Wade C.P., Chidsey C.E.D. Appl. Phys. Lett. 71:1997;1679.