Application of surface charge lithography to nanostructuring of GaN epilayers

Surface Engineering and Applied Electrochemistry

Volumn 44, Issue 1, 2008, Pages 6-8

  Popa, V Iu ^a,b   Volciuc, O ^a,b   Tiginyanu, I M ^a,b   Sarua, A ^c   Heard, P ^c  

^a TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

^b INSTITUTE OF APPLIED PHYSICS   (Moldova)

^c UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTROCHEMISTRY; EPILAYERS; ETCHING; NANOSTRUCTURED MATERIALS; PHOTOCHEMICAL REACTIONS; PHOTOELECTRICITY; SEMICONDUCTING GALLIUM COMPOUNDS; SURFACE CHARGE;

GALLIUM NITRIDE EPILAYERS; PHOTOELECTROCHEMICAL ETCHING; SURFACE CHARGE LITHOGRAPHY;

LITHOGRAPHY;

EID: 44649118106     PISSN: 10683755     EISSN: 19348002     Source Type: Journal    
DOI: 10.3103/S106837550801002X     Document Type: Article

References (6)

1. Tiginyanu, I.M. et al., Surface-Charge Lithography for GaN Microstructuring Based on Photoelectrochemical Etching Techniques, Appl. Phys. Lett., 2005, vol. 86, pp. 174102-174105.
2. Youtsey, C. et al., Rapid Evaluation of Dislocation Densities in n-Type GaN Films Using Photoenhanced Wet Etching, Appl. Phys. Lett., 1999, vol. 74, pp. 3537-3539.
3. Weyher, J.L. et al., Selective Photoetching and Transmission Electron Microscopy Studies of Defects in Heteroepitaxial GaN, J. Appl. Phys., 2001, vol. 90, pp. 6105-6109.
4. Segev, D. and Van de Walle, C.G., Origins of Fermi-Level Pinning on GaN and InN Polar and Nonpolar Surfaces, Europhys. Lett., 2006, vol. 76, pp. 305-311.
5. Kočan, M. et al., Surface Potential at as-Grown GaN(0001) MBE Layers, Phys. Status Solidi B, 2002, vol. 234, pp. 773-777.
6. Sarua, A. et al., Raman Spectroscopy of Porous and Bulk GaP Subjected to MeV-Ion Implantation and Annealing, J. Appl. Phys., 2000, vol. 88, pp. 7006-7012.