Copper Diffusion Behavior in SiO2/Si Structure During 400°C Annealing

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 1, 2004, Pages 1-8

  Hozawa, Kazuyuki ^a   Yugami, Jiro ^a  

^a HITACHI LTD   (Japan)

Author keywords

Copper; Copper concentration; Diffusion behavior; SiO2 thickness; Solubility

Indexed keywords

ANNEALING; APPROXIMATION THEORY; CONTAMINATION; COPPER; DIFFUSION; FLUORESCENCE; SILICON WAFERS; SPIN COATING; X RAY SPECTROMETERS;

COPPER CONCENTRATION; DIFFUSION BEHAVIOR; SIO2 THICKNESS;

SILICA;

EID: 1842710230     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.1     Document Type: Article

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