Effects of Ti addition on the morphology, interfacial reaction, and diffusion of Cu on SiO2

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 20, Issue 6, 2002, Pages 2361-2366

  Liu, C J ^a   Jeng, J S ^a   Chen, J S ^a   Lin, Y K ^b  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ADDITION REACTIONS; ANNEALING; COPPER; COPPER ALLOYS; DIFFUSION IN SOLIDS; INTERFACES (MATERIALS); MORPHOLOGY; SCANNING ELECTRON MICROSCOPY; SILICA; SUBSTRATES; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

INTERFACIAL REACTION; MICROSTRUCTURAL EVOLUTION; SINGLE CRYSTAL WAFER;

THIN FILMS;

EID: 0036883095     PISSN: 0734211X     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1520552     Document Type: Article

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