Epitaxial growth of copper nanowire arrays grown on H-terminated Si(110) using glancing-angle deposition

Journal of Materials Research

Volumn 19, Issue 12, 2004, Pages 3620-3625

  Alouach, H ^a   Mankey, G J ^a  

^a University of Alabama   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CRYSTAL ORIENTATION; DEPOSITION; DIFFUSION; EPITAXIAL GROWTH; EVAPORATION; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTING SILICON; SUBSTRATES; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS;

DEPOSITION ANGLE; ELECTRON BEAM EVAPORATION; EPITAXIAL ORIENTATION RELATIONSHIP; GLANCING ANGLE DEPOSITION; NANOWIRE ARRAYS; SUBSTRATE ROTATION; UNIDIRECTIONAL DIFFUSION;

COPPER;

EID: 12844263630     PISSN: 08842914     EISSN: None     Source Type: Journal    
DOI: 10.1557/JMR.2004.0465     Document Type: Article

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