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Volumn 21, Issue 3, 2006, Pages 352-357

X-ray diffuse scattering from stacking faults in Czochralski silicon

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL GROWTH; DIFFUSION; ELASTICITY; STACKING FAULTS; X RAY SCATTERING;

EID: 32844459417     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/21/3/025     Document Type: Article
Times cited : (12)

References (24)
  • 22
    • 32844464901 scopus 로고    scopus 로고
    • Infrared spectroscopy of oxygen interstitials and precipitates in nitrogen-doped silicon
    • Štoudek R and Humlíček J Infrared spectroscopy of oxygen interstitials and precipitates in nitrogen-doped silicon Physica B at press, available online 23 January 2006
    • Physica
    • Štoudek, R.1    Humlíček, J.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.