Atomistic modeling of morphological evolution during simultaneous etching and oxidation of Si(1 0 0)

Surface Science

Volumn 555, Issue 1-3, 2004, Pages 51-67

  Albao, M A ^a,b   Liu, Da Jiang ^a   Choi, Cheol H ^a,c   Gordon, Mark S ^a,b   Evans, J W ^a,b  

^a IOWA STATE UNIVERSITY   (United States)

^b IOWA STATE UNIVERSITY   (United States)

^c Kyungpook National University   (South Korea)

Author keywords

Etching; Models of surface kinetics; Monte Carlo simulations; Oxidation; Silicon; Silicon oxides; Surface structure, morphology, roughness, and topography

Indexed keywords

ADSORPTION; COMPUTER SIMULATION; DESORPTION; ELECTRON MICROSCOPY; ELECTRONIC STRUCTURE; ETCHING; MATHEMATICAL MODELS; MONTE CARLO METHODS; MORPHOLOGY; OXIDATION; SILICON COMPOUNDS; SURFACE ROUGHNESS;

MODELS OF SURFACE KINETICS; MONTE CARLO SIMULATIONS; SILICON OXIDES; SURFACE STRUCTURE, MORPHOLOGY, ROUGHNESS, AND TOPOGRAPHY;

SILICON;

EID: 1842527495     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2004.02.027     Document Type: Article

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