Utilization of Si atomic steps for Cu nanowire fabrication

Science and Technology of Advanced Materials

Volumn 6, Issue 6, 2005, Pages 667-670

  Hasunuma, Ryu ^a   Yada, Takanobu ^a   Okamoto, Junichi ^a   Hojo, Daisuke ^a,b   Tokuda, Norio ^a   Yamabe, Kikuo ^a  

^a UNIVERSITY OF TSUKUBA   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

AFM; Anodic oxidation step; Cu; Nanowire

Indexed keywords

COPPER; CRYSTAL ORIENTATION; OXIDATION; OXYGEN; SILICON;

ATOMIC STEP EDGES; DISSOLVED OXYGEN; NANOWIRE;

NANOSTRUCTURED MATERIALS;

EID: 27744553681     PISSN: 14686996     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.stam.2005.05.005     Document Type: Article

References (15)

1. K. Miki, D.R. Bowler, J.H.G. Owen, G.A.D. Briggs, and K. Sakamoto Atomically perfect bismuth lines on Si(001) Phys. Rev. B 59 1999 14868 14871
2. Y. Chen, D.A. ACjlberg, G.M. Ribeiro, Y.A. Chag, and R.S. Williams Self-assembled growth of epitaxial erbium disilicide nanowires on silicon (001) Appl. Phys. Lett. 76 2000 4004 4006
3. K. Hara, and I. Ohdomari Morphology control of Cu clusters formed on H-Si(111) surface in solution by Si potential Jpn. J. Appl. Phys. 37 1998 L1333 L1335
4. H. Omi, and T. Ogino Control of atomic step arrangements on a patterned Si(111) substrate by using molecular beam epitaxy J. Vac. Sci. Technol. A 17 1999 1610 1614
5. T. Ogino, H. Hibino, and Y. Homma Step arrangement design and nanostructure self-organization on Si surfaces Appl. Surf. Sci. 117/118 1997 642 651
6. D. Lee, and J. Blakely A growth method for creating arrays of atomically flat mesas on silicon Appl. Phys. Lett. 78 2001 1349 1351
7. H. Fukidome, and M. Matsumura A very simple method of flattening Si(111) surface at an atomic level using oxygen-free water Jpn. J. Appl. Phys. 38 1999 L1085 L1086
8. 2 fence on atomic step flow in chemical etching of Si surface Jpn. J. Appl Phys. 42 2003 L561 L563
9. N. Tokuda, D. Hojo, S. Yamasaki, K. Miki, and K. Yamabe Selective growth of Cu nanowires on Si(111) substrates Jpn. J. Appl. Phys. 42 2003 L1210 L1212
10. N. Tokuda, M. Nishizawa, K. Miki, S. Yamasaki, R. Hasunuma, and K. Yamabe Selective growth of monoatomic Cu rows at step edges on Si(111) substrates in ultralow-dissolved-oxygen water Jpn. J. Appl. Phys. 44 2005 L613 L615
11. C.P. Wade, and C.E.D. Chidsey Etch-pit initiation by dissolved oxygen on terraces of H-Si(111) Appl. Phys. Lett. 71 1997 1679 1681
12. H. Morinaga, M. Suyama, and T. Ohmi Mechanism of metallic particle growth and metal-induced pitting on Si wafer surface in wet chemical processing J. Electrochem. Soc. 141 1994 2834 2841
13. T. Homma, C.P. Wade, and C.E.D. Chidsey Nucleation of trace copper on the H-Si(111) surface in aqueous fluoride solutions J. Phys. Chem. B 102 1998 7919 7923
14. N. Tokuda, H. Watanabe, D. Hojo, S. Yamasaki, K. Miki, and K. Yamabe, Fabrication of Cu nanowires along atomic step edge lines on Si(111) substrates Appl. Surf. Sci. 237 2004 528 531
15. G.J. Pietsch, U. Köhler, and M. Henzler Anisotropic etching versus interaction of atomic steps: Scanning tunneling microscopy observations on HF/NH4F-treated Si(111) J. Appl. Phys. 73 1993 4797 4807