Classical size effect in oxide-encapsulated Cu thin films: Impact of grain boundaries versus surfaces on resistivity

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 26, Issue 4, 2008, Pages 605-609

  Sun, Tik ^a   Yao, Bo ^a   Warren, Andrew P ^a   Kumar, Vineet ^b   Roberts, Scott ^b   Barmak, Katayun ^b   Coffey, Kevin R ^a  

^a UNIVERSITY OF CENTRAL FLORIDA   (United States)

^b CARNEGIE MELLON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGRICULTURAL PRODUCTS; COPPER ALLOYS; CRYSTAL GROWTH; FILM THICKNESS; GRAIN (AGRICULTURAL PRODUCT); GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; MAGNETIC FILMS; MOLECULAR BEAM EPITAXY; OXIDE FILMS; PHOTOACOUSTIC EFFECT; SCATTERING; SILICA; SOLIDS; THICK FILMS; THIN FILMS;

(001) PARAMETER; (1 1 0) SURFACE; (SEMI-)EMPIRICAL MODELS; COMBINED EFFECTS; CU THIN FILMS; FILM RESISTIVITY; GRAIN SIZES; GRAIN-BOUNDARY SCATTERING; POLY CRYSTALLINE; ROOM-TEMPERATURE (RT); SILICON DIOXIDES; SIZE EFFECTS; SPECULARITY; SURFACE SCATTERING;

COPPER;

EID: 46449120888     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2938395     Document Type: Article

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