Fabrication of GaN nanowalls and nanowires using surface charge lithography

Materials Letters

Volumn 62, Issue 30, 2008, Pages 4576-4578

  Popa, Veaceslav ^a   Tiginyanu, Ion ^a,b   Volciuc, Olesea ^a   Sarua, Andrei ^c   Kuball, Martin ^c   Heard, Peter ^c  

^a TECHNICAL UNIVERSITY OF MOLDOVA   (Moldova)

^b INSTITUTE OF APPLIED PHYSICS   (Moldova)

^c UNIVERSITY OF BRISTOL   (United Kingdom)

Author keywords

GaN; Nanowalls; Nanowires; Photoelectrochemical etching

Indexed keywords

CONCENTRATION (PROCESS); ELECTRIC WIRE; ETCHING; GALLIUM ALLOYS; GALLIUM COMPOUNDS; GALLIUM NITRIDE; LITHOGRAPHY; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; NITRIDES; SURFACE TREATMENT;

CRITICAL SIZES; DIRECT-WRITING; DOPING CONCENTRATIONS; GAN; GAN MATERIAL; ION-BEAM TREATMENT; LATERAL DIMENSIONS; MASKLESS; NANO-STRUCTURING; NANOWALLS; NEGATIVE CHARGING; PEC ETCHING; PHOTOELECTROCHEMICAL ETCHING; SURFACE CHARGE LITHOGRAPHY; UNDERCUT ETCHING;

SEMICONDUCTING GALLIUM;

EID: 53249107531     PISSN: 0167577X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.matlet.2008.08.046     Document Type: Article

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