Material considerations for avalanche photodiodes

IEEE Journal on Selected Topics in Quantum Electronics

Volumn 14, Issue 4, 2008, Pages 998-1009

  David, J P R ^a   Tan, C H ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Avalanche multiplication; Avalanche photodiodes (APDs); Excess noise; Impact ionization; Tunneling

Indexed keywords

AVALANCHE PHOTODIODES; ELECTRON TUNNELING; PHOTODIODES;

AVALANCHE MULTIPLICATION; DEVICE PERFORMANCE; EXCESS NOISE; IONIZATION PROCESS; MATERIAL REQUIREMENTS; OPTICAL SIGNALS; ULTRAVIOLET WAVELENGTH; WAVELENGTH REGIONS;

IMPACT IONIZATION;

EID: 49049096140     PISSN: 1077260X     EISSN: None     Source Type: Journal    
DOI: 10.1109/JSTQE.2008.918313     Document Type: Article

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