Penetration depths in the ultraviolet for 4H, 6H and 3C silicon carbide at seven common laser pumping wavelengths

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 229-233

  Sridhara, S G ^a   Eperjesi, T J ^a   Devaty, R P ^a   Choyke, W J ^a  

^a UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

Absorption coefficient; Pumping lasers; Silicon carbide; Ultraviolet; Wavelength

Indexed keywords

ENERGY GAP; LIGHT ABSORPTION; PUMPING (LASER); SEMICONDUCTING SILICON COMPOUNDS; THERMAL EFFECTS; ULTRAVIOLET RADIATION;

ABSORPTION COEFFICIENT; PENETRATION DEPTHS;

SILICON CARBIDE;

EID: 0032633149     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00508-X     Document Type: Article

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