Impact ionization coefficients of 4H silicon carbide

Applied Physics Letters

Volumn 85, Issue 8, 2004, Pages 1380-1382

  Hatakeyama, T ^a   Watanabe, T ^a   Shinohe, T ^a   Kojima, K ^b   Arai, K ^b   Sano, H ^c  

^a TOSHIBA CORPORATION   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; ANNEALING; AVALANCHE DIODES; CHEMICAL LASERS; DOPING (ADDITIVES); ELECTRIC BREAKDOWN; ELECTRIC FIELDS; ELECTRONIC STRUCTURE; EPITAXIAL GROWTH; IMPACT IONIZATION; INDUCTIVELY COUPLED PLASMA; INTEGRAL EQUATIONS; LEAKAGE CURRENTS; MONTE CARLO METHODS; SEMICONDUCTOR MATERIALS; ULTRAVIOLET RADIATION;

AVALANCHE BREAKDOWN; CREE RESEARCH INC. (CO); DRIFT VELOCITY; EPITAXIAL WAFERS; IMPACT IONIZATION COEFFICIENTS;

SILICON CARBIDE;

EID: 4544344694     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1784520     Document Type: Article

References (13)

1. A. O. Konstantinov, Q. Wahab, N. Nordell, and U. Lindefelt, Appl. Phys. Lett. 71, 90 (1997).
2. R. Raghunathan and B. J. Baliga, Solid-State Electron. 43, 199 (1999).
3. S. Nakamura, H. Kumagai, T. Kimoto, and H. Matsunami, Appl. Phys. Lett. 80, 3355 (2002).
4. K. Kojima, T. Ohno, T. Fujimoto, M. Katsuno, N. Ohtani, J. Nishio, Y. Ishida, T. Takahashi, T. Suzuki, T. Tanaka, and K. Arai, Appl. Phys. Lett. 81, 2974 (2002).
5. A. G. Chynoweth, Phys. Rev. 109, 1537 (1958).
6. A. Schenk, Advanced Physical Models for Silicon Device Simulation (Springer, Wien, 1998), p. 90.
7. L. V. Keldysh, Zh. Eksp. Teor. Fiz. 48, 1962 (1965) [Sov. Phys. JETP 21, 1135 (1965)].
8. L. V. Keldysh, Zh. Eksp. Teor. Fiz. 48, 1962 (1965) [Sov. Phys. JETP 21, 1135 (1965)].
9. K. Hess, Monte Carlo Device Simulation: Full Band and Beyond (Klumer, Boston, 1991), Chap. 2.
10. K. Bløtekjaer, IEEE Trans. Electron Devices 17, 38 (1970).
11. H.-E. Nilsson and M. Hjelm, J. Appl. Phys. 86, 6230 (1999).
12. E. Bellotti, H.-E. Nilsson, K. F. Brennan, P. P. Ruden, and R. Trew, J. Appl. Phys. 87, 3864 (2000).
13. M. Hjelm, H.-E. Nilsson, A. Martinez, K. F. Breman, and E. Bellotti, J. Appl. Phys. 93, 1099 (2003).