Effect of impact ionization in the InGaAs absorber on excess noise of avalanche photodiodes

IEEE Journal of Quantum Electronics

Volumn 41, Issue 8, 2005, Pages 1092-1096

  Ng, J S ^a   Tan, C H ^a   David, J P R ^a   Rees, G J ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Avalanche photodiodes; Impact ionization; Noise

Indexed keywords

AVALANCHE DIODES; ELECTRIC BREAKDOWN; IMPACT IONIZATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE;

AVALANCHE PHOTODIODES; EXCESS NOISE;

PHOTODIODES;

EID: 23844534746     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2005.850700     Document Type: Article

References (15)

1. J. C. Campbell et al., "Recent advances in avalanche photodiodes," IEEE J. Sel. Topics Quantum Electron., vol. 10, no. 4, pp. 777-787, Jul./Aug. 2004.
2. 0.47 As photodiodes with dark current limited by generation-recombination and tunneling," Appl. Phys. Lett., vol. 37, no. 3, pp. 322-325, Aug. 1980.
3. 0.47 As heterojunction bipolar transistors," Appl. Phys. Lett., vol. 60, no. 25, pp. 3150-3152, Jun. 1992.
4. 0.47 As impact ionization coefficients," IEEE Trans. Electron Devices, vol. 50, no. 4, pp. 901-905, Apr. 2003.
5. 0.47 As," Appl. Phys. Lett., vol. 84, no. 13, Mar. 2004.
6. 0.48 As avalanche photodiode array," IEEE J. Quantum Electron., vol. 38, no. 11, pp. 1536-1540, Nov. 2002.
7. 0.48 As avalanche photodiodes and arrays," IEEE J. Quantum Electron., vol. 40, no. 8, pp. 1536-1540, Aug. 2004.
8. J. N. Hollenhorst, "A theory of multiplication noise," IEEE Trans. Electron Devices, vol. 37, no. 3, pp. 781-788, Mar. 1990.
9. N. F. Shih, "Excess noise analysis of separate absorption multiplication region superlattice avalanche photodiode," IEEE Trans. Electron Devices, vol. 48, no. 6, pp. 1075-1081, Jun. 2001.
10. M. M. Hayat, W. L. Sargeant, and B. E. A. Saleh, "Effect of dead space on gain and noise in Si and GaAs avalanche photodiodes," IEEE J. Quantum Electron., vol. 28, no. 5, pp. 1360-1365, May 1992.
11. A. Spinelli and A. L. Lacaita, "Mean gain of avalanche photodiodes in a dead space model," IEEE Trans. Electron Devices, vol. 43, no. 1, pp. 23-30, Jan. 1996.
12. 0.53 As over the wavelength range 1.0-1.7 μm," Electron. Lett., vol. 21, no. 25/26, pp. 1187-1189, 1985.
13. L. W. Cook, G. E. Bulman, and G. E. Stillman, "Electron and hole impact ionization coefficients in InP determined by photomultiplication measurements," Appl. Phys. Lett., vol. 40, no. 7, pp. 589-591, 1982.
14. J. S. Ng, "Impact ionization measurement and modeling of long wavelength avalanche photodiodes," Ph.D. dissertation, Univ. Sheffield, Sheffield, U.K., Feb. 2003.
15. G. J. Rees and J. P. R. David, "Why small avalanche photodiodes are beautiful," Proc. SPIE Quantum Sensing: Evolution and Revolution from Past to Future, vol. 4999, pp. 349-362, 2003.