Low-noise impact-ionization-engineered avalanche photodiodes grown on InP substrates

IEEE Photonics Technology Letters

Volumn 14, Issue 12, 2002, Pages 1722-1724

  Wang, S ^a   Hurst, J B ^a   Ma, F ^a   Sidhu, R ^a   Sun, X ^a   Zheng, X G ^a   Holmes Jr , A L ^a   Huntington, A ^b   Coldren, L A ^b   Campbell, J C ^a  

^a The University of Texas at Austin   (United States)

^b University of California   (United States)

Author keywords

Avalanche excess noise; Avalanche multiplication; Avalanche photodiode; Impact ionization; Photodetector; Photodiode

Indexed keywords

AVALANCHE DIODES; IONIZATION; SEMICONDUCTING INDIUM PHOSPHIDE; SPURIOUS SIGNAL NOISE; SUBSTRATES;

AVALANCHE PHOTODIODES;

PHOTODIODES;

EID: 0036894098     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.804651     Document Type: Article

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