GaAs-based heterojunction p-i-n photodetectors using pentanary InGaAsNSb as the intrinsic layer

IEEE Photonics Technology Letters

Volumn 17, Issue 9, 2005, Pages 1932-1934

  Cheah, W K ^a   Fan, W J ^a   Yoon, S F ^a   Zhang, D H ^a   Ng, B K ^a   Loke, W K ^a   Liu, R ^b   Wee, A T S ^b  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

InGaAsNSb semiconductors; Molecular beam epitaxy (MBE); p i n photodiodes; Responsivity

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC CURRENT MEASUREMENT; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS; PHOTODIODES; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; VOLTAGE MEASUREMENT;

HETEROJUNCTION PHOTODETECTORS; INTRINSIC LAYER; SOLID SOURCE MOLECULAR BEAM EPITAXY;

PHOTODETECTORS;

EID: 27144545409     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2005.851923     Document Type: Article

References (16)

1. M. Weyers, M. Sato, and H. Ando, "Red shift of photoluminescence and absorption in dilute GaAsN alloy layers," Jpn. J. Appl. Phys., pt. 1, vol. 31, no. 7A, pp. L853-L855, Jul. 1992.
2. 1-x using a N radical as the N source," Jpn. J. Appl. Phys., pt. Part 2, vol. 33, no. 8A, pp. L1056-L1058, Aug. 1994.
3. E. Tournie, M.-A. Pinault, and A. Guzmán, "Mechanisms affecting the photoluminescence spectra of GaInNAs after post-growth annealing," Appl. Phys. Lett., vol. 80, no. 22, pp. 4148-4150, Jun. 2002.
4. S. Kurtz, J. Webb, L. Gedvilas, D. Friedman, J. Geisz, J. Olson, R. King, D. Joslin, and N. Karam, "Structural changes during annealing of GaInAsN," Appl. Phys. Lett., vol. 78, no. 6, pp. 748-750, Feb. 2001.
5. W. Li, M. Pessa, and J. Likonen, "Lattice parameter in GaNAs epilayers on GaAs: Deviation from Vegard's law," Appl. Phys. Lett., vol. 78, no. 19, pp. 2864-2866, May 2001.
6. J. F. Geisz and D. J. Friedman, "III-N-V Semiconductors for solar photovoltaic applications," Semicond. Sci. Technol., vol. 17, pp. 769-777, Aug. 2002.
7. 1-xAs on GaAs (001)," Semicond. Sci. Technol., vol. 8, pp. 2031-2034, 1993.
8. x on GaAs [100] by molecular-beam epitaxy," J. Appl. Phys., vol. 94, no. 6, pp. 3828-3833, Sep. 2003.
9. X. Yang, M. J. Jurkovic, J. B. Héroux, and W. I. Wang, "Molecular beam epitaxial growth of InGaAsN:Sb/GaAs quantum wells for long-wavelength semiconductor lasers," Appl. Phys. Lett., vol. 75, no. 2, pp. 178-180, Jul. 1999.
10. K. Volz, V. Gambin, W. Ha, M. A. Wisetey, H. Yuen, S. Bank, and J. S. Harris, "The role of Sb in the MBE growth of (GaIn)(NAsSb)," J. Cryst. Growth, vol. 251, no. 1-4, pp. 360-366, Apr. 2003.
11. L. H. Li, V. Sallet, G. Patriarche, L. Largeau, S. Bouchoule, L. Travers, and J. C. Harmand, "Investigations on GaInNAsSb quinary alloy for 1.5 μm laser emission on GaAs," Appl. Phys. Lett., vol. 83, no. 7, pp. 1298-1300, Aug. 2003.
12. x on GaAs [100] by solid source molecular beam epitaxy," Thin Solid Films, to be published.
13. y P-i-N structures grown on GaAs by molecular beam epitaxy," J. Mater. Sci., Mater. Electron., vol. 16, no. 5, pp. 301-307, May 2005.
14. + implantation," Appl. Phys. Lett., vol. 75, no. 10, pp. 1410-1412, Sep. 1999.
15. W. K. Cheah, W. J. Fan, S. F. Yoon, T. K. Ng, W. K. Loke, D. H. Zhang, T. Mei, R. Liu, and A. T. S. Wee, "Investigation of N incorporation in InGaAs and GaAs epilayers on GaAs using solid source molecular beam epitaxy," J. Cryst. Growth, vol. 275, no. 3, pp. 440-447, Mar. 2005.
16. P. Moriarty, P. H. Beton, Y.-R. Ma, and M. Henini, "Adsorbed and substituted Sb dimers on GaAs(001)," Phys. Rev. B, vol. 53, no. 24, pp. R16148-R16151, Jun. 1996.