A new look at impact lonization-part I: A theory of gain, noise, breakdown probability, and frequency response

IEEE Transactions on Electron Devices

Volumn 46, Issue 8, 1999, Pages 1623-1631

  Mclntyre, R J ^a  

^a Pointe Claire   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; COMPUTER SIMULATION; ELECTRIC BREAKDOWN; ELECTRIC FIELDS; FREQUENCY RESPONSE; IMPACT IONIZATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; PROBABILITY DENSITY FUNCTION; SPURIOUS SIGNAL NOISE;

AVALANCHE PHOTODIODES; IONIZATION COEFFICIENTS;

PHOTODIODES;

EID: 0033169534     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.777150     Document Type: Article

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