Avalanche multiplication noise characteristics in thin GaAs p+-i-n+ diodes

IEEE Transactions on Electron Devices

Volumn 45, Issue 10, 1998, Pages 2102-2107

  Li, K F ^a   Ong, D S ^a   David, John P R ^a   Rees, G J ^a   Tozer, Richard C ^a   Robson, Peter N ^a   Grey, R ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

MCINTYRE THEORY;

AVALANCHE DIODES;

EID: 0032188252     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.725242     Document Type: Article

References (16)

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