Silicon heterointerface photodetector

Applied Physics Letters

Volumn 68, Issue 26, 1996, Pages 3692-3694

  Hawkins, Aaron R ^a   Reynolds, Thomas E ^a   England, Derek R ^a   Babic, Dubravko I ^a   Mondry, Mark J ^a   Streubel, Klaus ^a   Bowers, John E ^a  

^a University of California at Santa Barbara   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; ELECTRIC CURRENT MEASUREMENT; ELECTRIC FIELDS; FREQUENCY RESPONSE; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; REACTIVE ION ETCHING; SEMICONDUCTING INDIUM COMPOUNDS; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

INDIUM GALLIUM ARSENIDE; INFRARED AVALANCHE PHOTODETECTORS; SILICON HETEROINTERFACE PHOTODETECTORS; WAFER FUSION;

PHOTODETECTORS;

EID: 0030165856     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.115975     Document Type: Article

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