The Determination of Impact Ionization Coefficients in (100) Gallium Arsenide Using Avalanche Noise and Photocurrent Multiplication Measurements

IEEE Transactions on Electron Devices

Volumn 32, Issue 11, 1985, Pages 2454-2466

  Bulman, Gary E ^a   Robbins, Virginia M ^b   Stillman, Gregory E ^b  

^a SANDIA NATIONAL LABORATORIES   (United States)

^b UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTOR DIODES - IONIZATION;

IMPACT IONIZATION; PHOTOMULTIPLICATION MEASUREMENTS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0022152203     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1985.22295     Document Type: Article

References (41)

1. R. A. Logan, A. G. Chynoweth, and B. G. Cohen, Phys. Rev., vol. 128, p. 2518, 1962.
2. R. A. Logan and S. M. Sze, in Proc. Int. Conf. Phys. Semicond. (Kyoto, 1966), Suppl. J. Phys. Soc. Japan, vol. 21, p. 434, 1966.
3. H. Kressel and G. Kupsky, Int. J. Electron., vol. 20, p. 535, 1966.
4. R. Hall and J. H. Leck, Int. J. Electron., vol. 25, p. 529, 1968.
5. Y. J. Chang and S. M. Sze, J. Appl. Phys., vol. 40, p. 5392, 1969.
6. S. N. Shabde and C. Yeh, J. Appl. Phys., vol. 41, p. 4743, 1970.
7. G. H. Glover, J. Appl. Phys., vol. 44, p. 3253, 1973.
8. G. Salmer, J. Pribetich, A. Farrayre, and B. Kramer, J. Appl. Phys., vol. 44, p. 314, 1973.
9. G. E. Stillman, C. M. Wolfe, J. A. Rossi, and A. G. Foyt, Appl. Phys. Lett., vol. 24, p. 471, 1974.
10. M. H. Woods, W. C. Johnson, and M. A. Lampert, Solid-State Electron., vol. 16, p. 381, 1973.
11. T. P. Pearsall, R. E. Nahory, and J. R. Chelikowsky, Phys. Rev. Lett., vol. 39, p. 295, 1977.
12. T. P. Pearsall, F. Capasso, R. E. Nahory, M. A. Pollack, and J. R Chelikowsky, Solid-State Electron., vol. 21, p. 297, 1978.
13. F. Capasso, R. E. Nahory, M. A. Pollack, and T. P. Pearsall, Phys Rev. Lett., vol. 39, p. 723, 1977.
14. F. Capasso, R. E. Nahory, and M. A. Pollack, Electron. Lett., vol 15, p. 117, 1979.
15. H. D. Law and C. A. Lee, Solid-State Electron. vol. 21, p. 331, 1978.
16. M. Ito, S. Kagawa, T. Kaneda, and T. Yamaoka, J. Appl. Phys., vol. 49, p. 4607, 1978.
17. H. Ando and H, Kanbe, Solid-State Electron., vol. 24, p. 629, 1981.
18. M. H. Lee and S. M. Sze, Solid-State Electron., vol. 23, p. 1007, 1980.
19. R. J. McIntyre, IEEE Trans. Electron Devices, vol. ED-19, p. 709, 1972.
20. G. E. Bulman, V. M. Robbins, K. F. Brennan, K. Hess, and G. B. Stillman, IEEE Electron Device Lett., vol. EDL-4, p. 181, 1983.
21. J. J. LePore, J. Appl. Phys., vol. 51, p. 6441, 1980.
22. G. E. Bulman, L. W. Cook, and G. E. Stillman, Solid-State Electron. vol. 25, p. 1189, 1982.
23. C. S. Kang and P. E. Green, in Proc. Int. Symp. GaAs (Dallas, 1968), Inst. Phys. Conf. vol. 7, Inst. of Phys., London, 18, 1968.
24. C. W. Kao and C. R. Crowell, Solid-State Electron., vol. 23, p. 881, 1980.
25. A. M. Sekala, D. L. Feucht, and A. G. Milnes, in Proc. Int. Symp. GaAs (Deauville, 1974), Inst. Phys. Conf. Ser., vol. 24, Inst. Phys., Bristol, p. 245, 1975.
26. G. E. Stillman and C. M. Wolfe, in Semiconductors and Semimetals, vol. 12, R. K. Willardson and A. C. Beer, Eds. New York: Academic, 1977, p. 291.
27. W. N. Grant, Solid-State Electron., vol. 16, p. 1189, 1973.
28. C. L. Anderson and C. R. Crowell, Phys. Rev., vol. B5, p. 2267, 1972.
29. Y. Okuto and C. R. Crowell, Solid-State Electron., vol. 18, p. 161, 1975.
30. C. A. Lee, R. A. Logan, R. L. Batdorf, J. J. Kleinmack, and W. Wiegmann, Phys. Rev., vol. 134, p. A761, 1964.
31. G. E. Stillman, V. M. Robbins, and N. Tabatabaie, IEEE Trans. Electron Devices, vol. ED-31, p. 1643, 1984.
32. B. J. Baliga, R. Ehle, J. R. Shealy, and W. Garwacki, IEEE Electron Device Lett., vol. EDL-2, p. 302, 1981.
33. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley, 1981, p. 104.
34. G. E. Stillman, L. W. Cook, G. E. Bulman, N. Tabatabaie, R. Chin, and P. D. Dapkus, IEEE Trans. Electron Devices, vol. ED-29, p. 1355, 1982.
35. R. J. McIntyre, IEEE Trans. Electron Devices, vol. ED-13, p. 164, 1966.
36. C-W. Kao and C. R. Crowell, Solid-State Electron., vol. 23, p. 881, 1980.
37. G. A. Baraff, Phys. Rev., vol. 128, p. 2507, 1962.
38. A. D. Sutherland, IEEE Trans. Electron Devices, vol. ED-27, p. 1299, 1980.
39. J. L. T. Waugh and G. Dolling, Phys. Rev., vol. 137, p. 2410, 1963.
40. R. Chwang, C-W. Kao, and C. R. Crowell, Solid-State Electron., vol. 22, p. 599, 1979.
41. Y.-C. Chang, D. Z.-Y. Ting, J. Y. Tang, and K. Hess, Appl. Phys. Lett., vol. 42, p. 76, 1983.