A monte carlo investigation of multiplication noise in thin p+-i-n+ GaAs avalanche photodiodes

IEEE Transactions on Electron Devices

Volumn 45, Issue 8, 1998, Pages 1804-1810

  Ong, D S ^a   Li, K F ^a   Rees, G J ^a   Dunn, G M ^a   David, J P R ^a   Robson, P N ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; ELECTRONS; IONIZATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; PROBABILITY; SEMICONDUCTING GALLIUM ARSENIDE; SPURIOUS SIGNAL NOISE;

EXCESS NOISE FACTOR; HOLE INJECTION; MULTIPLICATION NOISE;

PHOTODIODES;

EID: 0032140607     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.704382     Document Type: Article

References (19)

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