The effect of dead space on gain and excess noise in In0.48Ga0.52P p+in+ diodes

Semiconductor Science and Technology

Volumn 18, Issue 8, 2003, Pages 803-806

  Tan, C H ^a   Ghin, R ^a,b   David, J P R ^a   Rees, G J ^a   Hopkinson, M ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b AGILENT TECHNOLOGIES   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

ACOUSTIC VARIABLES MEASUREMENT; ELECTRONS; GAIN MEASUREMENT; IONIZATION; MATHEMATICAL MODELS; MONTE CARLO METHODS; PROBABILITY DISTRIBUTIONS; SEMICONDUCTING INDIUM COMPOUNDS;

DEAD SPACE; ELECTRON INITIATED AVALANCHE GAIN; EXCESS NOISE; HOLE IONIZATION; INDIUM GALLIUM PHOSPHIDE;

DIODES;

EID: 0043016117     PISSN: 02681242     EISSN: None     Source Type: Journal    
DOI: 10.1088/0268-1242/18/8/314     Document Type: Article

References (12)

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