Field dependence of impact ionization coefficients in In0.53Ga0.47As

IEEE Transactions on Electron Devices

Volumn 50, Issue 4, 2003, Pages 901-905

  Ng, J S ^a   Tan, C H ^a   David, J P R ^a   Hill, G ^a   Rees, G J ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Avalanche breakdown; Avalanche multiplication; Impact ionization; InGaAs

Indexed keywords

AVALANCHE DIODES; ELECTRIC BREAKDOWN; ELECTRIC FIELD EFFECTS; ELECTRON MOBILITY; PHOTOCURRENTS; PHOTOMULTIPLIERS;

IMPACT IONIZATION;

SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

EID: 0038156233     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.812492     Document Type: Article

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