Impact ionization characteristics of III-V semiconductors for a wide range of multiplication region thicknesses

IEEE Journal of Quantum Electronics

Volumn 36, Issue 2, 2000, Pages 198-204

  Yuan, P ^a   Hansing, C C ^a   Anselm, K A ^a   Lenox, C V ^a   Nie, H ^a   Holmes Jr , A L ^a   Streetman, B G ^a   Campbell, J C ^a  

^a The University of Texas at Austin   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; IMPACT IONIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS;

AVALANCHE PHOTODIODES;

PHOTODIODES;

EID: 0033895072     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.823466     Document Type: Article

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