Study of avalanche breakdown and impact ionization in 4H silicon carbide

Journal of Electronic Materials

Volumn 27, Issue 4, 1998, Pages 335-341

  Konstantinov, A O ^a   Wahab, Q ^b   Nordell, N ^c   Lindefelt, U ^a  

^a ABB CORPORATE RESEARCH   (Sweden)

^b LINKÖPING UNIVERSITY   (Sweden)

^c ACREO AB   (Sweden)

Author keywords

Blocking voltage; Critical field; Ionization rates; Junction breakdown; SiC

Indexed keywords

EID: 0000038064     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-998-0411-x     Document Type: Article

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