Nonlocal effects in thin 4H-SiC UV avalanche photodiodes

IEEE Transactions on Electron Devices

Volumn 50, Issue 8, 2003, Pages 1724-1732

  Ng, B K ^a,b   David, John P R ^a   Tozer, Richard C ^a   Rees, Graham J ^a   Yan, Feng ^c   Zhao, Jian H ^c   Weiner, Maurice ^d  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c RUTGERS UNIVERSITY   (United States)

^d UNITED SILICON CARBIDE INC   (United States)

Author keywords

Avalanche multiplication; Avalanche photodiodes (APDs); Breakdown voltage; Dead space; Impact ionization; Ionization coefficients; Nonlocal effects

Indexed keywords

ELECTRIC BREAKDOWN; IMPACT IONIZATION; SILICON CARBIDE; SPURIOUS SIGNAL NOISE; ULTRAVIOLET RADIATION;

IONIZATION COEFFICIENTS;

PHOTODIODES;

EID: 0042443524     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.815144     Document Type: Article

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