Excess avalanche noise in In0.52Al0.48As

IEEE Journal of Quantum Electronics

Volumn 43, Issue 6, 2007, Pages 503-507

  Goh, Y L ^a   Marshall, A R J ^a   Massey, D J ^a   Ng, J S ^a   Tan, C H ^a   Hopkinson, M ^a   David, J P R ^a   Jones, S K ^b   Button, C C ^b   Pinches, S M ^b  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

^b Bookham Technology plc   (United Kingdom)

Author keywords

Avalanche photodetectors; Excess noise; Impact ionization; InAlAs

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON INJECTION; IMPACT IONIZATION; MATHEMATICAL MODELS; PHOTODETECTORS; SEMICONDUCTING INDIUM COMPOUNDS;

EXCESS NOISE; HOLE INJECTION; IONIZATION COEFFICIENTS;

AVALANCHE DIODES;

EID: 34249947688     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2007.897900     Document Type: Article

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