Avalanche noise characteristics in submicron InP diodes

IEEE Journal of Quantum Electronics

Volumn 44, Issue 4, 2008, Pages 378-382

  Tan, Lione J J ^a   Ng, J S ^a   Tan, C H ^a   David, J P R ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

Avalanche multiplication; Dead space; Excess noise; Impact ionization; InP; Tunneling

Indexed keywords

AVALANCHE MULTIPLICATION; DEAD SPACE; EXCESS NOISE; INP; TUNNELING;

DIODES; ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; HETEROJUNCTION BIPOLAR TRANSISTORS; IMPACT IONIZATION; TUNNELING (EXCAVATION);

AVALANCHE DIODES;

EID: 49049087857     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2007.914771     Document Type: Article

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