A new planar InGaAs-InAlAs avalanche photodiode

IEEE Photonics Technology Letters

Volumn 18, Issue 18, 2006, Pages 1898-1900

  Levine, B F ^a   Sacks, R N ^a   Ko, J ^a,b   Jazwiecki, M ^a   Valdmanis, J A ^a   Gunther, D ^a   Meier, J H ^a  

^a Picometrix Inc   (United States)

^b Fish & Richardson PC   (United States)

Author keywords

Avalanche photodiode (APD); Molecular beam epitaxy (MBE); Optical receivers; Photodetectors

Indexed keywords

AVALANCE PHOTODIODE; OPTICAL RECEIVERS; RECEIVER SENSITIVITY;

BIT ERROR RATE; ELECTRIC BREAKDOWN; MOLECULAR BEAM EPITAXY; PHOTODETECTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE;

AVALANCHE DIODES;

EID: 33749636871     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2006.881684     Document Type: Article

References (6)

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6. R. R. Sutherland, C. P. Skrimshire, and M. J. Robertson, "A reliability methodology applied to very high reliability planar InGaAs/InP PIN photodetectors," Br. Telecom. Technol. J., vol. 7, pp. 69-77, Jan. 1989.