Performance of low-dark-current 4H-SiC avalanche photodiodes with thin multiplication layer

IEEE Transactions on Electron Devices

Volumn 53, Issue 9, 2006, Pages 2259-2264

  Guo, Xiangyi ^b   Beck, Ariane L ^b   Huang, Zhihong ^b   Duan, Ning ^b   Campbell, Joe C ^a,b   Emerson, David ^c   Sumakeris, Joseph J ^c  

^a IEEE   (United States)

^b The University of Texas at Austin   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

Avalanche photodiode (APD); Impact ionization; Photodetector; Photodiode; Silicon carbide

Indexed keywords

AVALANCHE PHOTODIODES (APD); MULTIPLICATION LAYERS; NOISE FACTORS; TIME-DOMAIN PULSE MEASUREMENTS;

AVALANCHE DIODES; DARK CURRENTS; IMPACT IONIZATION; PHOTOCURRENTS; PHOTODETECTORS; SILICON CARBIDE;

PHOTODIODES;

EID: 33947137661     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.879677     Document Type: Article

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