HgCdTe electron avalanche photodiodes

Journal of Electronic Materials

Volumn 33, Issue 6, 2004, Pages 630-639

  Kinch, M A ^a   Beck, J D ^a   Wan, C F ^a   Ma, F ^b   Campbell, J ^b  

^a DRS Sensors and Targeting Systems Inc   (United States)

^b UNIVERSITY OF TEXAS AT AUSTIN   (United States)

Author keywords

Avalanche photodiodes (APDs); HgCdTe; High density vertically integrated photodiode (HDVIP); Mid wavelength infrared (MWIR)

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRON ENERGY LEVELS; ELECTRONS; INFRARED INSTRUMENTS; IONIZATION; MERCURY COMPOUNDS; MONTE CARLO METHODS; PHONONS; PHOTODIODES;

AVALANCHE PHOTODIODES (APD); GAIN MECHANISMS; HGCDTE; HIGH-DENSITY VERTICALLY INTEGRATED PHOTODIODES (HDVIP); MID-WAVELENGTH INFRARED (MWIR);

AVALANCHE DIODES;

EID: 3042747316     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-004-0058-1     Document Type: Conference Paper

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