Impact Ionization Rates in (100) Al0.48In0.52As

IEEE Electron Device Letters

Volumn 11, Issue 10, 1990, Pages 437-438

  Watanabe, I ^a   Torikai, T ^a   Makita, K ^a   Fukushima, K ^a   Uji, Toshio ^a  

^a NEC CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DIODES; SEMICONDUCTOR DIODES, PHOTODIODE; SUPERLATTICES;

ALUMINUM INDIUM ARSENIDE; AVALANCHE PHOTODIODES; IMPACT IONIZATION; METALORGANIC VAPOR PHASE EPITAXY; PIN DIODES;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0025503567     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.62988     Document Type: Article

References (7)

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2. R. People, K. W. Wecht, K. Alavi, and A. Y. Cho, “Measurement of the conduction-band discontinuity of molecular beam epitaxial grown In0.52Al0.48As/In0.53Ga0.47As N-n heterojunction by C-V profiling,” Appl. Phys. Lett., vol. 43, p. 118, 1983.
3. F. Capasso, K. Mohamed, K. Alavi, A. Y. Cho, and P. W. Foy, “Impact ionization rates for electrons and holes in Al0.48In0.52As,” Appl. Phys. Lett., vol. 45, p. 968, 1984.
4. J. I. Davis, A. C. Marshall, M.D. Scott, and J. M. Griffiths, “Structural and optical properties of GaAlInAs lattice matched to InP grown by low-pressure metalorganic vapor phase epitaxy,” Appl. Phys. Lett., vol. 53, p. 276, 1988.
5. F. Osaka, T. Mikawa, and T. Kanada, “Impact ionization coefficients of electrons and holes in (lOO)-oriented Ga1−xInx.As1−yPy,” IEEE J. Quantum Electron., vol. QE-21, no. 9, pp. 1326–1338, 1985.
6. H. D. Law and C. A. Lee, “Interband scattering effects on secondary ionization coefficients in GaAs,” Solid-State Electron., vol. 21, p. 331, 1978.
7. K. Taguchi, T. Torikai, Y. Sugimoto, K. Makita, and H. Ishihara, “Temperature dependence of impact ionization coefficient in InP,” J. Appl. Phys., vol. 59, no. 2, p. 476, 1986.