Fused InGaAs-Si avalanche photodiodes with low-noise performances

IEEE Photonics Technology Letters

Volumn 14, Issue 11, 2002, Pages 1593-1595

  Kang, Y ^a   Mages, P ^a   Clawson, A R ^a   Yu, P K L ^a   Bitter, M ^b   Pan, Z ^b   Pauchard, A ^b   Hummel, S ^b   Lo, Y H ^b  

^a UNIVERSITY OF CALIFORNIA   (United States)

^b Nova Crystals Inc   (United States)

Author keywords

Avalanche photodiode (APD); Noise; Optical communication; Photodetectors; Wafer bonding

Indexed keywords

AVALANCHE DIODES; CURRENT DENSITY; ELECTRIC BREAKDOWN; GAIN MEASUREMENT; OPTICAL COMMUNICATION; PHOTODETECTORS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING SILICON; SPURIOUS SIGNAL NOISE; TEMPERATURE MEASUREMENT;

AVALANCHE PHOTODIODES; LOW NOISE FACTOR; SILICON AVALANCHE REGION; WAFER BONDING;

PHOTODIODES;

EID: 0036851096     PISSN: 10411135     EISSN: None     Source Type: Journal    
DOI: 10.1109/LPT.2002.803370     Document Type: Article

References (11)

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