Calculation of gain and noise with dead space for GaAs and Al xGa 1-xAs avalanche photodiode

IEEE Transactions on Electron Devices

Volumn 49, Issue 7, 2002, Pages 1112-1117

  Li, Xiaowei ^b   Zheng, Xiaoguang ^b   Wang, Shuling ^a,b   Ma, Feng ^b   Campbell, Joe C ^a,b  

^a IEEE   (United States)

^b The University of Texas at Austin   (United States)

Author keywords

Avalanche multiplication; Avalanche photodiodes; Dead space effect; Excess noise factor; Gain distribution; Impact ionization; Ionization coefficient

Indexed keywords

AVALANCHE PHOTODIODES; DEAD SPACE EFFECT; GAIN DISTRIBUTION;

COMPUTER SIMULATION; ELECTRIC FIELD EFFECTS; GAIN MEASUREMENT; IMPACT IONIZATION; MONTE CARLO METHODS; PHOTODIODES; SEMICONDUCTING ALUMINUM COMPOUNDS; SPURIOUS SIGNAL NOISE; Z TRANSFORMS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0036638620     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.1013264     Document Type: Article

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