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Volumn 4454, Issue , 2001, Pages 188-197

MWIR HgCdTe avalanche photodiodes

Author keywords

APD; Avalanche photodiode; Bandwidth; Excess noise; Gain; HgCdTe; Infrared; Ionization ratio; Mercury cadmium telluride; Rise time

Indexed keywords

AVALANCHE DIODES; DIFFUSION; ELECTRONS; GAIN MEASUREMENT; GEOMETRY; IONIZATION; MERCURY COMPOUNDS; PHOTODIODES;

EID: 0035761860     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.448174     Document Type: Conference Paper
Times cited : (137)

References (7)
  • 2
    • 84955018580 scopus 로고
    • Reverse breakdown in long wavelength lateral collection CdxHg1-xTe diodes
    • C.T. Elliot, N.T. Gordon, R.S. Hall, and G. Crimes, "Reverse Breakdown in Long Wavelength Lateral Collection CdxHg1-xTe Diodes," J. Vac. Sci. Technol. A 8(2), pp. 1251-1253, 1990.
    • (1990) J. Vac. Sci. Technol. A , vol.8 , Issue.2 , pp. 1251-1253
    • Elliot, C.T.1    Gordon, N.T.2    Hall, R.S.3    Crimes, G.4
  • 5
    • 0010671091 scopus 로고    scopus 로고
    • Unpublished data
    • Unpublished data
  • 6
    • 84922644221 scopus 로고
    • Multiplication noise in uniform avalanche photodiodes
    • R.J. McIntyre, "Multiplication Noise in Uniform Avalanche Photodiodes," IEEE Trans. Electron Devices Vol. ED-13, pp.164-168, 1996.
    • (1966) IEEE Trans. Electron Devices , vol.ED-13 , pp. 164-168
    • McIntyre, R.J.1
  • 7
    • 0033169534 scopus 로고    scopus 로고
    • A new look at impact ionization - Part I: A theory of gain, noise, breakdown probability, and frequency response
    • R.J. McIntyre, "A New Look at Impact Ionization - Part I: A Theory of Gain, Noise, Breakdown Probability, and Frequency Response," IEEE Trans Electron Devices Vol. ED-46, pp 1623-1631, 1999.
    • (1999) IEEE Trans Electron Devices , vol.ED-46 , pp. 1623-1631
    • McIntyre, R.J.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.