Avalanche multiplication and breakdown in AlxGa1-xAs (x < 0.9)

IEEE Transactions on Electron Devices

Volumn 49, Issue 12, 2002, Pages 2349-2351

  Ng, B K ^a   David, J P R ^a   Rees, G J ^a   Tozer, R C ^a   Hopkinson, M ^a   Airey, R J ^a  

^a UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

AlxGa1 xAs; Avalanche breakdown; Avalanche multiplication; Impact ionization; Ionization coefficients

Indexed keywords

BANDWIDTH; CAPACITANCE; ELECTRIC BREAKDOWN; IMPACT IONIZATION; MOLECULAR BEAM EPITAXY; PHOTOCURRENTS;

AVALANCHE MULTIPLICATION; IONIZATION COEFFICIENTS;

AVALANCHE DIODES;

EID: 0037002312     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2002.805570     Document Type: Article

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